EL3120

EL3120

The EL3120 Optocoupler Gate Driver stands as a robust and reliable solution for applications demanding high performance, wide temperature range, and stringent safety standards.
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Description

Technical Parameters

The EL3120 Optocoupler Gate Driver is a versatile and reliable solution designed for demanding applications. With guaranteed performance across a wide temperature range (-40 to 100℃), a peak output current of ±2.5A, and a threshold input current of 5 mA, it provides robust drive capabilities and precise control. The device's exceptional common mode transient immunity of ±15kV/μs ensures reliable operation in electrically noisy environments, while the high isolation voltage (Viso=5000 Vrms) meets stringent safety requirements. Additionally, the EL3120 is compliant with environmental standards, including RoHS, and holds various approvals, such as cUL, VDE, SEMKO, NEMKO, DEMKO, and FIMKO, further attesting to its reliability and suitability for diverse industries and applications.

product-1185-852

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Mfr Part

EL3120

Description

OPTOISO IGBT MOSFET DRIVER

Stock

50000

Product Status

Active

Technology

Optical Coupling

Number of Channels

1

Voltage - Isolation

5000Vrms

Common Mode Transient Immunity (Min)

15kV/μs

Propagation Delay tpLH / tpHL (Max)

300ns,300ns

Pulse Width Distortion (Max)

100ns

Current - Output High, Low

2A, 2A

Current - Peak Output

2A

Voltage - Forward (Vf) (Typ)

1.4V

Current - DC Forward (If) (Max)

25 mA

Voltage - Output Supply

15V ~ 30V

Operating Temperature

-40°C ~ 105°C

Package / Case

DIP8(7.62mm)

Package

Tube

 

Applications:

 

• Isolated IGBT/Power MOSFET gate drive
• Industrial Inverter
• AC brushless and DC motor drives
• Inverter for home appliances

 

Description:

 

The EL3120 consists of an infrared light emitting diodes and integrated high gain, high-speed photo detectors. The device is housed in a 8 pin DIP package. The photo detector has an internal shield that provides a guaranteed common-mode transient immunity of ±15 kV/µs. It is suitable for direct gate driving circuit for IGBTs or power MOSFETs.

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