SI8235AB-C-IS1R

The SI8235AB-C-IS1R isolation gate driver is a high-performance solution designed for power electronics and industrial applications. Its key features include dual isolated drivers, high-speed and high/low-side options, exceptional electromagnetic immunity, flexible input choices, transient immunity, overload protection, AEC-Q100 qualification for automotive use, a wide operating temperature range, and RoHS-compliant packages. With these features, the SI8235AB-C-IS1R offers a reliable and versatile solution for precise and robust gate driving needs in demanding environments.

·Power delivery systems 

·Motor control systems 

·Isolated dc-dc power supplies 

·Lighting control systems 

·Plasma displays

·Solar and industrial inverters

The Si823x isolated driver family combines two independent, isolated drivers into a single package. The Si8230/1/3/4 are high-side/low-side drivers, and the Si8232/5/6/7/8 are dual drivers. Versions with peak output currents of 0.5 A (Si8230/1/2/7) and 4.0 A (Si8233/4/5/6/8) are available. All drivers operate with a maximum supply voltage of 24 V.

The Si823x drivers utilize Silicon Labs' proprietary silicon isolation technology, which provides up to 5 kVRMS withstand voltage per UL1577 and fast 60 ns propagation times. Driver outputs can be grounded to the same or separate grounds or connected to a positive or negative voltage. The TTL level compatible inputs with >400 mV hysteresis are available in individual control input (Si8230/2/3/5/6/7/8) or PWM input (Si8231/4) configurations. High integration, low propagation delay, small installed size, flexibility, and cost-effectiveness make the Si823x family ideal for a wide range of isolated MOSFET/IGBT gate drive applications.

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