NCD57256DR2G

The NCD57256DR2G can be configured as dual low-side, dual high-side or half-bridge drivers for enhanced adaptability. Programmable control options, including overlap and dead time control, allow for precise switching operation. The device also includes a disable pin for power supply sequencing and an ANB feature to simplify half-bridge configuration. It prioritizes safety with IGBT/MOSFET gate clamping and tight UVLO thresholds during short circuits. Excellent 2.5 or 5 kVrms galvanic isolation ensures robust performance in high voltage applications. Additionally, it is ideally suited for automotive applications, is AEC-Q100 compliant and has PPAP capabilities. Finally, its environmental compliance as a lead-free, halogen-free/brominated flame retardant-free, and RoHS compliant device makes it an environmentally friendly choice. In summary, the NCD57256DR2G gate driver provides unparalleled versatility, performance and safety for a variety of applications.

• EV Chargers

• Motor Control

• Uninterruptible Power Supplies (UPS)

• Industrial Power Supplies

• Solar Inverters

• Automotive Applications

NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up to 32 V bias voltage on the output side. The device accepts complementary inputs and offers separate pins for Disable and Dead Time control for system design convenience. Drivers are available in wide body SOIC−16 and narrow body SOIC−16 package.

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