NCV57252DWR2G

The NCV57252DWR2G is a highly versatile and high-performance isolation gate driver designed for a wide range of power electronics applications. It boasts features such as high peak output current, configurability as a dual low-side, dual high-side, or half-bridge driver, programmable overlap and dead time control, and a disable pin for power sequencing. Its ANB function simplifies circuit design, and it offers IGBT/MOSFET gate clamping during short circuits. Galvanic isolation of 2.5 or 5 kVrms and tight UVLO thresholds enhance safety and reliability, while support for various logic input ranges ensures seamless integration. This driver is well-suited for applications like EV chargers, motor control, UPS, industrial power supplies, solar inverters, and automotive systems, making it a robust and flexible choice for modern power electronics designs.

• EV Chargers

• Motor Control

• Uninterruptible Power Supplies (UPS)

• Industrial Power Supplies

• Solar Inverters

• Automotive Applications

NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up to 32 V bias voltage on the output side. The device accepts complementary inputs and offers separate pins for Disable and Dead Time control for system design convenience. Drivers are available in wide body SOIC−16 and narrow body SOIC−16 package.

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