
NCD57091CDWR2G
Description
Technical Parameters
The NCD57091CDWR2G isolation gate driver redefines excellence in semiconductor devices with its remarkable features. Boasting a high peak output current of +6.5 A/−6.5 A, low clamp voltage drop, and short propagation delays, it ensures unparalleled performance and responsiveness. The device's IGBT/MOSFET gate clamping, active pull-down, and tight UVLO thresholds enhance reliability and flexibility in bias configurations. With a broad bias voltage range, logic input compatibility, and 5 kVrms galvanic isolation, it adapts seamlessly to diverse applications. Its immunity to transients and electromagnetic interference ensures uninterrupted operation, while automotive excellence with the NCV prefix and AEC−Q100 qualification sets a new standard. Environmentally friendly, Pb−Free, Halogen Free/BFR Free, and RoHS compliant, the NCD57091CDWR2G stands as a beacon of innovation and sustainability in the electronics industry.

Related Products:
|
Mfr Part |
NCD57091ADWR2G |
NCD57091BDWR2G |
NCD57091CDWR2G |
|
Description |
DGTL ISO GATE DVR |
DGTL ISO GATE DVR |
DGTL ISO GATE DVR |
|
Stock |
30000 |
30000 |
30000 |
|
Product Status |
Active |
Active |
Active |
|
Technology |
Capacitive Coupling |
Capacitive Coupling |
Capacitive Coupling |
|
Number of Channels |
1 |
1 |
1 |
|
Voltage-Isolation |
5000Vrms |
5000Vrms |
5000Vrms |
|
Common Mode Transient Immunity (Min) |
100kV/us |
100kV/us |
100kV/us |
|
Propagation Delay tpLH / tpHL (Max) |
90ns, 90ns |
90ns, 90ns |
90ns, 90ns |
|
Current - Output High, Low |
6.5A, 6.5A |
6.5A, 6.5A |
6.5A, 6.5A |
|
Voltage - Supply |
9V ~ 32V |
9V ~ 32V |
9V ~ 32V |
|
Operating Temperature |
-40~C ~ 125~C |
-40~C ~ 125~C |
-40~C ~ 125~C |
|
Package / Case |
WSOP8 |
WSOP8 |
WSOP8 |
|
Package |
Tape & Reel (TR) |
Tape & Reel (TR) |
Tape & Reel (TR) |
Typical Applications:
• Motor Control
• Uninterruptible Power Supplies (UPS)
• Automotive Applications
• Industrial Power Supplies
• Solar Inverters
GENERAL DESCRIPTION:
NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (version A/D/F), negative power supply (version B) and separate high and low (OUTH and OUTL) driver outputs (version C/E) for system design convenience. The driver accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V and they are available in wide−body SOIC−8 package
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