HCPL2531SDM

HCPL2531SDM

OPTOISO 5KV 2CH TRANS 8DIP
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Description

Technical Parameters

Related Products:

 

Mfr Part

HCPL2531S

HCPL2531SD

HCPL2531SDM

HCPL2531SDVM

HCPL2531TSR2VM

Description

OPTOCOUPLER, PHOTOTRANSISTOR OUT

OPTOCOUPLER, PHOTOTRANSISTOR OUT

OPTOCOUPLER, PHOTOTRANSISTOR OUT

OPTOCOUPLER, PHOTOTRANSISTOR OUT

OPTOCOUPLER, PHOTOTRANSISTOR OUT

Stock

80000

80000

80000

80000

80000

Product Status

Active

Active

Active

Active

Active

Voltage - Isolation

5000Vrms

5000Vrms

5000Vrms

5000Vrms

5000Vrms

Current Transfer Ratio (Min)

19% @ 16mA

19% @ 16mA

19% @ 16mA

19% @ 16mA

19% @ 16mA

Current Transfer Ratio (Max)

50% @ 16mA

50% @ 16mA

50% @ 16mA

50% @ 16mA

50% @ 16mA

Turn On / Turn Off Time (Typ)

250ns, 260ns

250ns, 260ns

250ns, 260ns

250ns, 260ns

250ns, 260ns

Input Type

DC

DC

DC

DC

DC

Output Type

1MB Transistor

1MB Transistor

1MB Transistor

1MB Transistor

1MB Transistor

Voltage - Output (Max)

20V

20V

20V

20V

20V

Current - Output / Channel

8mA

8mA

8mA

8mA

8mA

Voltage - Forward (Vf) (Typ)

1.45V

1.45V

1.45V

1.45V

1.45V

Current - DC Forward (If) (Max)

25 mA

25 mA

25 mA

25 mA

25 mA

Operating Temperature

-40~C ~ 100~C

-40~C ~ 100~C

-40~C ~ 100~C

-40~C ~ 100~C

-40~C ~ 100~C

Package / Case

SMD8(7.62mm)

SMD8(7.62mm)

SMD8(7.62mm)

SMD8(7.62mm)

SMD8(7.62x10.16)

Package

Tape & Reel (TR)

Tape & Reel (TR)

Tape & Reel (TR)

Tape & Reel (TR)

Tape & Reel (TR)

 

Applications:

 

• Line receivers

• Pulse transformer replacement

• Output interface to CMOS-LSTTL-TTL

• Wide bandwidth analog coupling

 

General Description:

 

The 6N135M, 6N136M, HCPL4503M, HCPL2530M, and HCPL2531M optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor for each channel.

A separate connection for the bias of the photodiode improves the speed by several orders of magnitude over conventional phototransistor optocouplers by reducing the base−collector capacitance of the input transistor.

The HCPL4503M has no internal connection to the phototransistor base for improved noise immunity. An internal noise shield provides superior common mode rejection of up to 50,000 V/s.

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