H11D1SR2M

H11D1SR2M

Related Products: Application s: • CMOS Driven Solid State Reliability • Telephone Ring Detector • Digital Logic Isolation General Description : The H11AG1M device consists of a Gallium-Aluminum- Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line...
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Description

Technical Parameters

Related Products:

 

Mfr Part

H11D1SM

H11D1SR2M

H11D1SR2VM

H11D1SVM

Description

OPTOCOUPLER, PHOTOTRANSISTOR OUT

OPTOCOUPLER, PHOTOTRANSISTOR OUT

OPTOCOUPLER, PHOTOTRANSISTOR OUT

OPTOCOUPLER, PHOTOTRANSISTOR OUT

Stock

80000

80000

80000

80000

Product Status

Active

Active

Active

Active

Voltage - Isolation

5000Vrms

5000Vrms

5000Vrms

5000Vrms

Current Transfer Ratio (Min)

20% @ 10mA

20% @ 10mA

20% @ 10mA

20% @ 10mA

Current Transfer Ratio (Max)

600% @ 10mA

600% @ 10mA

600% @ 10mA

600% @ 10mA

Turn On / Turn Off Time (Typ)

5µs,5µs

5µs,5µs

5µs,5µs

5µs,5µs

Input Type

DC

DC

DC

DC

Output Type

Transistor HV

Transistor HV

Transistor HV

Transistor HV

Voltage - Output (Max)

300V

300V

300V

300V

Current - Output / Channel

100mA

100mA

100mA

100mA

Voltage - Forward (Vf) (Typ)

1.2V

1.2V

1.2V

1.2V

Current - DC Forward (If) (Max)

60 mA

60 mA

60 mA

60 mA

Operating Temperature

-55°C ~ 100°C

-55°C ~ 100°C

-55°C ~ 100°C

-55°C ~ 100°C

Package / Case

SMD6(7.62mm)

SMD6(7.62mm)

SMD6(7.62mm)

SMD6(7.62mm)

Package

Tape & Reel (TR)

Tape & Reel (TR)

Tape & Reel (TR)

Tape & Reel (TR)

 

Applications:

 

• CMOS Driven Solid State Reliability

• Telephone Ring Detector

• Digital Logic Isolation

 

General Description:

 

The H11AG1M device consists of a Gallium-Aluminum- Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low-power logic circuits, tele-communications equipment and portable electronics isolation applications.

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