H11AG3M
Description
Technical Parameters
Related Products:
|
Mfr Part |
H11AG3M |
|
Description |
OPTOCOUPLER, PHOTOTRANSISTOR OUT |
|
Stock |
80000 |
|
Product Status |
Active |
|
Voltage - Isolation |
5000Vrms |
|
Current Transfer Ratio (Min) |
100% @ 1mA |
|
Current Transfer Ratio (Max) |
- |
|
Turn On / Turn Off Time (Typ) |
- |
|
Input Type |
DC |
|
Output Type |
Transistor DC |
|
Voltage - Output (Max) |
70V |
|
Current - Output / Channel |
150mA |
|
Voltage - Forward (Vf) (Typ) |
1.45V |
|
Current - DC Forward (If) (Max) |
- |
|
Operating Temperature |
-55°C ~ 100°C |
|
Package / Case |
DIP6(7.62mm) |
|
Package |
Tube |
Applications:
• CMOS Driven Solid State Reliability
• Telephone Ring Detector
• Digital Logic Isolation
General Description：
The H11AG1M device consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low-power logic circuits, tele- communications equipment and portable electronics isolation applications
Hot Tags: h11ag3m, China h11ag3m manufacturers, suppliers, 4N25-500E, ACPL-214-500E, Optical Isolators, 4N35-500E, ACPL-217-500E, 6N136-500E
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