H11A1S(TA)

H11A1S(TA)

OPTOISO 5KV TRANS W/BASE 6DIP
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Description

Technical Parameters

Related Products:

 

Mfr Part

H11A1S(TA)

H11A1S(TA)-V

H11A1S(TB)

H11A1S(TB)-V

H11A1S1(TA)

H11A1S1(TA)-V

H11A1S1(TB)

H11A1S1(TB)-V

Description

OPTOCOUPLER, PHOTOTRANSISTOR OUT

OPTOCOUPLER, PHOTOTRANSISTOR OUT

OPTOCOUPLER, PHOTOTRANSISTOR OUT

OPTOCOUPLER, PHOTOTRANSISTOR OUT

OPTOCOUPLER, PHOTOTRANSISTOR OUT

OPTOCOUPLER, PHOTOTRANSISTOR OUT

OPTOCOUPLER, PHOTOTRANSISTOR OUT

OPTOCOUPLER, PHOTOTRANSISTOR OUT

Stock

80000

80000

80000

80000

80000

80000

80000

80000

Product Status

Active

Active

Active

Active

Active

Active

Active

Active

Voltage - Isolation

5000Vrms

5000Vrms

5000Vrms

5000Vrms

5000Vrms

5000Vrms

5000Vrms

5000Vrms

Current Transfer Ratio (Min)

50% @ 10mA

50% @ 10mA

50% @ 10mA

50% @ 10mA

50% @ 10mA

50% @ 10mA

50% @ 10mA

50% @ 10mA

Current Transfer Ratio (Max)

-

-

-

-

-

-

-

-

Turn On / Turn Off Time (Typ)

3us, 3us

3us, 3us

3us, 3us

3us, 3us

3us, 3us

3us, 3us

3us, 3us

3us, 3us

Input Type

DC

DC

DC

DC

DC

DC

DC

DC

Output Type

Transistor DC

Transistor DC

Transistor DC

Transistor DC

Transistor DC

Transistor DC

Transistor DC

Transistor DC

Voltage - Output (Max)

80V

80V

80V

80V

80V

80V

80V

80V

Current - Output / Channel

-

-

-

-

-

-

-

-

Voltage - Forward (Vf) (Typ)

1.2V

1.2V

1.2V

1.2V

1.2V

1.2V

1.2V

1.2V

Current - DC Forward (If) (Max)

-

-

-

-

-

-

-

-

Operating Temperature

-55~C ~ 110~C

-55~C ~ 110~C

-55~C ~ 110~C

-55~C ~ 110~C

-55~C ~ 110~C

-55~C ~ 110~C

-55~C ~ 110~C

-55~C ~ 110~C

Package / Case

SMD6(7.62mm)

SMD6(7.62mm)

SMD6(7.62mm)

SMD6(7.62mm)

SMD6(7.62mm)

SMD6(7.62mm)

SMD6(7.62mm)

SMD6(7.62mm)

Package

Tape & Reel (TR)

Tape & Reel (TR)

Tape & Reel (TR)

Tape & Reel (TR)

Tape & Reel (TR)

Tape & Reel (TR)

Tape & Reel (TR)

Tape & Reel (TR)

 

Applications:

 

• Power supply regulators

• Digital logic inputs

• Microprocessor inputs

 

General Description


The 4N2X, 4N3X, H11AX series of devices each consist of an infrared emitting diode optically coupled to a phototransistor.

 

They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.

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