UCC21320QDWKRQ1

The UCC21320QDWKRQ1 isolation gate driver offers a robust solution for automotive applications with its high peak output, wide input voltage range, and versatile output drive supply. Its universal driver configuration, programmable overlap, and dead time, along with compact design, make it suitable for various power stage implementations. The driver's excellent common-mode transient immunity, surge immunity, and long isolation barrier life ensure reliable performance in challenging conditions. With compatibility features, fast disable for power sequencing, and automotive qualifications, the UCC21320QDWKRQ1 is a comprehensive and reliable choice for power management systems in modern vehicles.

• HEV and BEV battery chargers

• Isolated converters in DC-DC and AC-DC power supplies

• Motor drive and DC-to-AC solar inverters

• Uninterruptible power supply (UPS)

The UCC21320-Q1 is an isolated dual-channel gate drivers with 4-A source and 6-A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 3.75-kVRMS basic isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500 VDC.

Every driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). A disable pin shuts down both outputs simultaneously, and allows normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low.

Each device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection.

With all these advanced features, the UCC21320-Q1 enables high efficiency, high power density, and robustness.

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