SI8232BB-B-IS1R

The SI8232BB-B-IS1R is a groundbreaking dual-isolated gate driver offering exceptional features. With up to 5 VRMS input-to-output isolation, 1500 VDC peak driver-to-driver differential voltage, and versatile HS/LS and dual driver versions, it provides unmatched flexibility. Operating at up to 8 MHz, it caters to high-frequency switching applications, supported by a peak output of 0.5 A (Si8230/1/2/7) or 0.4 A (Si8233/4/5/6/8). With robust electromagnetic immunity, a rapid 60 ns propagation delay, and transient immunity exceeding 45 kV/ps, it ensures precision and reliability. AEC-Q100 qualification attests to its automotive-grade reliability, and its wide operating range from -40 to +125°C makes it adaptable to various environments.

·Power delivery systems n

·Motor control systems n

·Isolated dc-dc power supplies n

·Lighting control systems n

·Plasma displays n

·Solar and industrial inverters

The Si823x isolated driver family combines two independent, isolated drivers into a single package. The Si8230/1/3/4 are high-side/low-side drivers, and the Si8232/5/6/7/8 are dual drivers. Versions with peak output currents of 0.5 A (Si8230/1/2/7) and 4.0 A (Si8233/4/5/6/8) are available. All drivers operate with a maximum supply voltage of 24 V.

The Si823x drivers utilize Silicon Labs' proprietary silicon isolation technology, which provides up to 5 kVRMS withstand voltage per UL1577 and fast 60 ns propagation times. Driver outputs can be grounded to the same or separate grounds or connected to a positive or negative voltage. The TTL level compatible inputs with >400 mV hysteresis are available in individual control input (Si8230/2/3/5/6/7/8) or PWM input (Si8231/4) configurations. High integration, low propagation delay, small installed size, flexibility, and cost-effectiveness make the Si823x family ideal for a wide range of isolated MOSFET/IGBT gate drive applications.

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