ADUM4221-2ARIZ-RL

The ADUM4221-2ARIZ-RL isolation gate driver is a versatile and high-performance component with impressive features. It can handle up to 4 A peak current with minimal RDSON_x (<2 Ω), supports a wide logic input voltage range of 2.5 V to 6.5 V, and offers an output supply voltage range from 4.5 V to 35 V. Multiple UVLO options ensure precise power supply control, and its precise timing characteristics, including a 44 ns maximum propagation delay, make it suitable for high-speed applications. The driver's adjustable dead time and various input options allow for flexibility in configuration, and its high common-mode transient immunity (150 kV/μs) and high-temperature operation (up to 125°C) make it robust in challenging environments. With a default low output configuration, the ADUM4221-2ARIZ-RL is a versatile and reliable choice for diverse isolation and control needs.

·Switching power supplies

·Isolated IGBT/MOSFET gate drives

·Industrial inverters

·Gallium nitride (GaN)/silicon carbide (SiC) compatible

The ADuM4221/ADuM4221-1/ADuM4221-2 are 4 A isolated, half bridge gate drivers that employ the Analog Devices, Inc., iCoupler® technology to provide independent and isolated high-side and low-side outputs. The ADuM4221/ADuM4221-1/ ADuM4221-2 provide 5700 V rms isolation in an increased creepage wide body, 16-lead SOIC_IC. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics superior to the alternatives, such as the combination of pulse transformers and gate drivers.

The isolators operate with a logic input voltage ranging from 2.5 V to 6.5 V, providing compatibility with lower voltage systems. In comparison to gate drivers employing high voltage level translation methodologies, the ADuM4221/ADuM4221-1/ ADuM4221-2 offer the benefit of true, galvanic isolation between the input and each output.

The ADuM4221/ADuM4221-1 each have built in overlap protection and allow dead time adjustment. A single resistor between the dead time pin (DT) and the GND1 pin sets the dead time on the secondary side between the high-side and the low-side outputs. The ADuM4221-2 does not have overlap protection nor dead time control.

An internal thermal shutdown (TSD) sets outputs low if the internal temperature on the ADuM4221/ADuM4221-1/ADuM4221-2 exceeds the TSD temperature. As a result, the ADuM4221/ADuM4221-1/ADuM4221-2 provide reliable control over the switching characteristics of the insulated gate bipolar transistor (IGBT)/metal-oxide semiconductor field effect transistor (MOSFET) configurations over a wide range of positive or negative switching voltages.

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